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GaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxy (H-MBE)

Published online by Cambridge University Press:  21 February 2011

Yoshitaka Okada ,
James S. Harris Jr. ,
Atsushi Sutoh  and
Mitsuo Kawabe
James S. Harris Jr.
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
Atsushi Sutoh
Affiliation:
Institute of Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, Japan
Mitsuo Kawabe
Affiliation:
Institute of Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, Japan
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Abstract

The purpose of this work is to achieve a high-quality epitaxy of GaAs-on-Ge system at low growth temperatures of 300 ∼ 400°C, by atomic hydrogen-assisted molecular beam epitaxy (H-MBE), in attempt to reduce Ge segregation to a minimum and to realize a layer-by-layer two-dimensional (2D) growth mode from the initial stages of the growth. A high-quality heteroepitaxy is expected in H-MBE technique as atomic H is known to act as an effective surfactant modifying the kinetics and energetics of the growth, which are practically difficult to control on atomic-scale unless a third element like a surfactant is introduced into the growth system. It is shown with the support of reflection high-energy electron diffraction (RHEED), secondary ion mass spectroscopy (SIMS), and atomic force microscopy (AFM) characterization that an enhanced layer-by-layer 2D growth can actually be realized and (2×4) GaAs(001) surface can be achieved in low-temperature heteroepitaxy on vicinal Ge(001) substrates at 400 °C by H-MBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 203
Copyright
Copyright © Materials Research Society 1996

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References

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