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GaAs/AlGaAs Multiquantum Well Infrared Detector Array with 6.0 μm Response Width

Published online by Cambridge University Press:  22 February 2011

Jin-Min Li ,
Hai-Qun Zheng ,
Yi-Ping Zeng  and
Mei-Ying Kong
Jin-Min Li
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.of, China
Hai-Qun Zheng
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.of, China
Yi-Ping Zeng
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.of, China
Mei-Ying Kong
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.of, China
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Abstract

lO×16 GaAs/AlGaAs quantum well infrared detector arrays with peak responsivity at 9.3μm have been achieved with front-side normal illumination based on a waveguide of doubly periodic grating coupler. The detector array with a wideband response from 4.2μm to 10.3μm is demonstrated by optimizing the quantum well structures and device processes. A peak detectivity D*λ =2.9×1010 cmHz1/2 /W and high a responsivity Rp=0.37A/W have been obtained at λp=9.3μm and T=77K. The dark current densities of the detectors in the array were smaller than 6.2×10−6 A/cm2 with the detectors biased (Vb=3.2V) for maximum detectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 83
Copyright
Copyright © Materials Research Society 1994

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References

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