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GaAs Solar Cell Using an Alternate Arsenic Source

  • V. S. Sundaram (a1), J. E. Avery (a1), G. R. Girard (a1), H. E. Hager (a1), A. G. Thompson (a1) and L. M. Fraas (a1)...

Abstract

Using an alternate arsenic source, namely, Tertiary Butyl Arsine, a concentrator GaAs solar cell has been grown in a low pressure metal organic chemical vapor deposition reactor. Under 72 sun, air mass 1.5 illumination, the cell had an open circuit voltage of 1.1 V, a fill factor of 83% and an overall efficiency of 21%.

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References

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