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GaAs Quantum Well Infrared Photodetectors Grown by OMVPE

  • W. S. Hobson (a1), A. Zussman (a1), B. F. Levine (a1), S. J. Pearton (a1), V. Swaminathan (a2) and L. C. Luther (a2)...

Abstract

We have grown, fabricated, and measured GaAs quantum well infrared photodetectors (QWIPs) using organometallic vapor phase epitaxy (OMVPE). The epitaxial layers were characterized by electrochemical capacitance-voltage profiling, double-crystal X-ray diffraction, cathodoluminescence, and infrared absorption. Dark current, responsivity spectra, and detectivity were measured for the QWIP devices. The performance of these QWIPs was comparable to detectors grown using MBE. This is of importance since OMVPE has advantages for wafer throughout and cost.

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[2] Paska, Z. F., Anderson, J. Y., and Lundqvist, L., Paper presented at the 5th International Conference on Metalorganic Vapor Phase Epitaxy, 18-21 June, 1990; J. Y. Anderson and G. Landgren, GaAs and Related Compounds, Karuuizawa, Japan, 1989, Inst. Phys. Conf. Ser. 106, 731 (1990).
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GaAs Quantum Well Infrared Photodetectors Grown by OMVPE

  • W. S. Hobson (a1), A. Zussman (a1), B. F. Levine (a1), S. J. Pearton (a1), V. Swaminathan (a2) and L. C. Luther (a2)...

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