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GaAs Micro Crystal Growth on A As-Terminated Si (001) Surface by Low Energy Focused Ion Beam

Published online by Cambridge University Press:  09 August 2011

Toyohiro Chikyow  and
Nobuyuki Koguchi
Toyohiro Chikyow
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba lbaraki 305, Japan, tchikyo@momokusa.nrim.go.jp
Nobuyuki Koguchi
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba lbaraki 305, Japan, tchikyo@momokusa.nrim.go.jp
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Abstract

Ordered GaAs micro crystal growth on a As-terminated Si (001) surface was demonstrated using a low energy focused ion beam. Si (001) surface was terminated by Arsenic. The surface showed a (2×1) structure with As dimers. The As layer was sputtered periodically with low energy focused Ga ion beam. Supplied Ga atoms migrated on the surface and trapped at the As removed region, forming Ga droplets. GaAs micro crystals were grown from Ga droplets by As molecule supply. The proposed method was shown to be effective as a fabrication method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 445
Copyright
Copyright © Materials Research Society 1999

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