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Ga1-xGdxN-Based Spin Polarized Light Emitting Diode

  • Muhammad Jamil (a1), Tahir Zaidi (a2), Andrew Melton (a2), Tianming Xu (a2) and Ian T. Ferguson (a3)...

Abstract

In this work, a room temperature spin-polarized LED based on ferromagnetic Ga1-xGdxN is reported. The device was grown by metalorganic chemical vapor deposition (MOCVD) and is the first report of a spin-LED based on Ga1-xGdxN. Electroluminescence from this device had a degree of polarization of 14.6% at 5000 Gauss and retained a degree of polarization of 9.3% after removal of the applied magnetic field. Ga1-xGdxN thin films were grown on 2 μm GaN templates and were co-doped with Si and Mg to achieve n-type and p-type materials. Co-doping of the Ga1-xGdxN films with Si produced conductive n-type material, while co-doping with Mg produced compensated p-type material. Both Si and Mg co-doped films exhibited room temperature ferromagnetism, measured by vibrating sample magnetometry.

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Corresponding author

*Corresponding author: e-mail: ianf@uncc.edu, Phone: (704) 687-5885

References

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1. Wolf, S. A., Chtchelkanova, A. Y., and Treger, D. M., Ibm Journal of Research and Development, 50(1), 101 (2006).
2. Ohno, H., Science, 281, 951 (1998).
3. Ohno, Y., Young, D. K., Beschoten, B., Matsukura, F., Ohno, H., and Awschalom, D. D., Nature, 402, 790 (1999).
4. Wang, K. Y., Campion, R. P., Edmonds, K. W., Sawicki, M., Dietl, T., Foxon, C. T., and Gallagher, B. L., 27th International Conference on the Physics of Semiconductors - ICPS-27. 2005. Flagstaff, Arizona (USA).
5. Khoda, M., Ohno, Y., Matsukura, F., and Ohno, H., Physica E, 32, 438 (2006).
6. Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science, 287, 1019 (2000).
7. Polyakov, et al. . J. Appl. Phys, 93, 5388 (2003).
8. Mahadevan, P. and Zunger, A., Appl. Phys. Lett. 85, 2860(2004).
9. Dhar, S., Perez, L., Brandt, O., Trampert, A., Ploog, K. H., Keller, J., and Beschoten, B., Physical Review B (Condensed Matter and Materials Physics), 72(24), 245203–1(2005).
10. Hite, J. K., Frazier, R. M., Davies, R., Thaler, G. T., Abernathy, C. R., and Pearton, S. J., Zavada, J. M., , Appl. Phys. Lett. 89, 092119(2006).
11. Zhou, Y. K., Choi, S. W., Emura, S., Hasegawa, S., and Asahi, H., Appl. Phys. Lett., 92, 062505 (2008).
12. Matyi, R. J., Jamil, M., and Shahedipour-Sandvik, F., phys. stat. sol. (a) 204, 2598 (2007).
13. Kane, M. H., Strassburg, M., Asghar, A., Fenwick, W. E., Senawiratne, J., Song, Q., Summers, C. J., Zhang, Z. J., Dietz, N., Ferguson, I. T., Materials Science and Engineering B 126, 230 (2006).

Keywords

Ga1-xGdxN-Based Spin Polarized Light Emitting Diode

  • Muhammad Jamil (a1), Tahir Zaidi (a2), Andrew Melton (a2), Tianming Xu (a2) and Ian T. Ferguson (a3)...

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