Skip to main content Accessibility help
×
Home

Furnace and Rta Injection of Point Defects into CVD-Grown B Doped Si and SiGe

  • Janet M. Bonar (a1), Barry M. Mcgregor (a2), Nick E. B. Cowern (a3), Aihua Dan (a4), Graham A. Cooke (a5) and Arthur F. W. Willoughby (a4)...

Abstract

The diffusion of B in Si and SiGe under the influence of point defect injection by Rapid Thermal Anneal (RTA) and conventional furnace anneal is studied in this work. B-doped regions in SiGe and Si were grown by LPCVD, and point defects were injected by RTA or furnace annealing bare, Si3N4 or SiO2 + Si3N4 covered samples in an oxygen atmosphere. Self-interstitial defects will be injected into bare Si while vacancy defects will be injected into Si3N4 covered samples, and inert annealing will occur in SiO2 + Si3N4 covered samples. The annealed and asgrown profiles were determined using SIMS analysis, and the diffusivities extracted by direct comparison of the profiles. Both interstitials and vacancies were injected during furnace annealing of SiGe, as demonstrated by the respective enhancement and retardation of the B diffusion. Enhanced B diffusion in SiGe was observed even for 5 s RTA at 1000°C, with an enhancement factor of ∼2.5. The B in Si diffusivity enhancement for interstitial injection by RTA oxidation was found to be a factor of ∼3 compared to inert anneals, close to the factor for SiGe.

Copyright

References

Hide All
1 Fang, T. T., Fang, W. T. C., Griffin, P. B., and Plummer, J. D., Appl. Phys. Lett. 68, 791 (1996).10.1063/1.116534
2 Kuo, P., Hoyt, J. L., Gibbons, J. F., Turner, J. E., and Lefforge, D., Appl. Phys. Lett. 67, 706 (1995).10.1063/1.115281
3 Bonar, J. M., McGregor, B. M., Willoughby, A. F. W., and A. Paine, D. N., Mat. Res. Soc. Proc. 568, 103 (1999).10.1557/PROC-568-103
4 Zaitsu, Y., Shimizu, T., Takeuchi, J., Matsumoto, S., Yoshida, M., Abe, T., and Arai, E., J. Electrochem. Soc. 145, 258 (1998).10.1149/1.1838244
5 Osada, K., Zaitsu, Y., Matsumoto, S., Yoshida, M., Arai, E., and Abe, T., J. Electrochem. Soc. 142, 202 (1995).10.1149/1.2043867
6 Lever, R. F., Bonar, J. M., and Willoughby, A. F. W., J. Appl. Phys. 83 1988 (1998).10.1063/1.366927
7 Tsai, J. C. C., VLSI Technology, ed. Sze, S. M. (McGraw-Hill, 1983) pp. 169218.
8 Hill, C., Semiconductor Silicon 1981, ed. Huff, H. R., Kriegler, R. J., and Takeishi, Y., (ECS Softbound Series, 1981) 81-5 pp. 9881006.

Furnace and Rta Injection of Point Defects into CVD-Grown B Doped Si and SiGe

  • Janet M. Bonar (a1), Barry M. Mcgregor (a2), Nick E. B. Cowern (a3), Aihua Dan (a4), Graham A. Cooke (a5) and Arthur F. W. Willoughby (a4)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed