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Fundamentals of Semiconductor Detectors for Ionizing Radiation

  • G.F. Knoll (a1) and D.S. Mcgregor (a1)

Abstract

The modes of operation of semiconductor detectors are reviewed, together with the influence of charge carrier collection in developing a signal pulse for spectroscopic applications. Because of the importance of charge trapping in many semiconductors of interest in the fabrication of room temperature radiation detectors, the effects of incomplete charge collection are quantified. Calculated results are presented for the expected pulse height and energy resolution under a variety of charge collection conditions.

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References

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1. Kania, D.R., Lane, S., Jones, B., and Bennet, C., IEEE Trans. Nucl. Science, 35 (1), 387 (1988).
2. Knoll, G.F., Radiation Detection and Measurement, 2nd. Ed., (John Wiley & Sons, New York, 1989), pp. 401407.
3. Dearnaley, G. and Northrop, D.C., Semiconductor Counters for Nuclear Radiations, (E. & F.N. Spon Ltd., London, 1964).
4. Sah, C.T., Noyce, R.N., and Shockley, W., Proc. IRE, 45, 1228, (1957).
5. Bertolini, G. and Coche, A., Semiconductor Detectors, (North-Holland Publishing Co., Amsterdam, 1968).
6. Day, R.B., Dearnaley, G.. and Palms, J.M., IEEE Trans. Nucl. Science, 14, 487 (1967).
7. Evans, R.D., The Atomic Nucleus, (Krieger Publishing Company, Malabar, 1985).

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