Skip to main content Accessibility help
×
Home

Fundamentals of Post-CMP Cleaning

  • Jin-Goo Park (a1) and Tae-Gon Kim (a2)

Abstract

Post CMP cleaning is necessary for contaminant removal after CMP process. The zeta potential of slurry particle and substrate has been considered to be a critical factor in terms of particle adhesion and removal. The fundamental research such as the calculation and measurement of adhesion forces between slurry particle and wafer surfaces can enhance the understanding of cleaning mechanism and development of cleaning process. The presence of more than two different materials during CMP introduces new defects at the materials interface, corrosion and severe scratches. Device specific chemistry and cleaning process should be introduced and developed for future and current CMP. The highest particle removal efficiency is observed when using cleaning solutions that yields the lowest adhesion force. The effect of frictional and adhesion forces attributed to slurry particles on the quality of Cu surfaces was experimentally investigated during metal CMP process. The magnitude of the adsorption of the organic acid on the slurry particle surfaces can have a significant effect on the frictional behavior as well as the adhesion force. Higher particle adhesion forces resulted in higher friction and might induce defects such as particle contamination and scratches on the polished surface after polishing. The magnitude of particle adhesion force on wafer surfaces in slurries can be directly related to the frictional forces and polished surface quality during CMP process. As low k and poly or bare silicon polishing introduced in fabrication process, the hydrophobicity of these surfaces could affect the defects after polishing. The control of wettability during and after polishing becomes more important in reducing the defects. The organic particles are major defects during metal and poly silicon CMP which may be caused by the surface reaction of organic sources with surfaces.

Copyright

References

Hide All
1. Steigerwald, J. M., Murarka, S. P., Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials (John Wiley & Sons, Inc., 1997) p. 1.
2. Wang, Y. L., Wang, T.C., Wu, J., Tseng, W.T., Lin, C.F., Thin Solid Film, 332, 385 (1998).
3. Zhang, L., Ph.D. dissertation, University of Arizona, (1998).
4. Lee, W., Torek, K. J., Palsulich, D. A., and Weston, L., Mater. Res. Soc. Symp. Proc. 477, 57 (1997).
5. Li, S. H., Banviller, H., Augagneur, C., Miller, B., Nabot-Hensaff, M. P. and Wooldridge, K., CMP-MIC Conference, 165 (1998).
6. Kern, W. and Puotinen, D. A., RCA Rev. 31, 187 (1970).
7. Wolf, S. and Tauber, R. N., Silicon Processing for the VLSI Era, 2nd ed. (Lattice Press, 2000) vol. 1, Process Technology.
8. Myers, T. L., Fury, M., and Krusell, W. C., Solid State Technol. 38, (1995).
9. Tardif, F., Constant, I., Lardin, T., Demoiliens, O., Fayolle, M. and Gobil, Y., MAMS 97 Vallard de Lans, France (1997).
10. Tardif, F., “Semiconductors and Semimetals”, 63, 186 (2000).
11. Prasad, J., Front-end Wafer Cleaning Challenges, IBID (International Baccalaureate) Press. Oct. (2004).
12. Hand, Aaron, “Damage-free Cleaning Beyond 65 nm” (IBID Press, 2005) Jan.
13. Scriven, L. E. and Sternling, C. V., Nature, 187, 186 (1960).
14. Marra, J. and Huethorst, J. A. M., Langmuir, 7, 2748 (1991).
15. Krupp, H., Particle Adhesion: Theory and Experiment, Advances in Colloid and Interface Science (Elsevier, New Your, 1967).
16. Visser, J., Particle Science and Technology, 13 169 (1995).
17. Israelachvili, J. N., Intermolecular and Surface Forces, 2nd ed. (Academic Press, London, 1992).
18. Krishnan, S., Busnaina, A. A., and Rimai, D. S., Advances in Particle Adhesion, 191 (1994).
19. Busnaina, A.A., and Gale, G.W., J. Particulate Sci. and Technol. 17, (1999).
20. Shaw, D. J., Introduction to Colloid and Surface Chemistry, 4th ed. (Butterworth-Heinenemann Ltd., Oxford, 1992) p. 212.
21. Busnaina, A. A., Lin, H., Moumen, N., Feng, J. W. and Taylor, J., IEEE Transactions on Semiconductor Manufacturing, 15, 374 (2002).
22. Haller, K. K., Ventikos, Y., Poulikakos, D. and Monkewitz, P., J. Appl. Phys. 92, 2821 (2002).
23. Yun, S., Han, S., Lee, J., Hong, Y., Park, J., Yun, B., Hong, C., Cho, H. and Moon, J., The Electrochemical Society Fall Meeting, Cancun, Mexico, 2006
24. Han, J. H., Hah, S. R., Kang, Y. J. and Park, J. G., J. Electrochem. Soc. 154, H255 (2007)
25. Lee, S. Y., Lee, S. H. and Park, J. G., J. Electrochem. Soc. 150, G327 (2003).
26. Hong, Y. K., Eom, D. H., Lee, S. H., Kim, T. G., Park, J. G. and Busnaina, A. A., J. Electrochem. Soc. 151, G756 (2004).
27. Hong, Y. K., Han, J. H., Kim, T. G., Park, J. G. and Busnaina, A. A., J. Electrochem. Soc. 154, H36 (2007).

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed