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Fundamental Consideration on Carrier Transport in Amorphous Silicon Superlattices

Published online by Cambridge University Press:  21 February 2011

Y. L. Jiang  and
H. L. Hwang
Y. L. Jiang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of, China
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of, China
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Abstract

Basic consideration of parameters including electron de Broglie wavelength, resonant tunneling time (τr) and inelastic scattering tunneling (τi) were studied to identify the intrinsic tunneling properties of amorphous double—barrier (DB) structure. The order of magnitude of τr/τi. of amorphous DB structure is about 5 to 12 which is far beyond that of crystalline case which is 1 to 2. The transmissivity versus applied voltage or versus electron energy were calculated to identify the influence of barrier height, barrier thickness and electron effective mass. The influence of carrier distribution will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 869
Copyright
Copyright © Materials Research Society 1991

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References

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