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Full Color Luminescence from Amorphous Silicon Quantum Dots Embedded in Silion Nitride

Published online by Cambridge University Press:  17 March 2011

Nae-Man Park
Affiliation:
Kwangju Institute of Science and Technology, Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangiu, 500-712, Korea
Tae-Soo Kim
Affiliation:
Kwangju Institute of Science and Technology, Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangiu, 500-712, Korea
Chel-Jong Choi
Affiliation:
Kwangju Institute of Science and Technology, Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangiu, 500-712, Korea
Tae-Yeon Seong
Affiliation:
Kwangju Institute of Science and Technology, Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangiu, 500-712, Korea
Seong-Ju Park
Affiliation:
Kwangju Institute of Science and Technology, Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangiu, 500-712, Korea
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Abstract

Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silion nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photolumiscence were observed from the a-Si QD strictures by controlling the fot size. An organe light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on vottage was less than 5 V. An external quantum effiency of 2×10−3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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