Skip to main content Accessibility help
×
Home

Full Band Monte Carlo Simulation of Short Channel MOSFETs in 4H and 6H-SiC

  • M. Hjelm (a1) (a2), H-E. Nilssoni (a1) (a2), E. Dubaric (a1) (a2), C. Persson (a3), P. Käckell (a4) and C. S. Petersson (a2)...

Abstract

This is a presentation of a full band Monte Carlo (MC) study, which compares electron transport and device performance for 4H and 6H-SiC 100 nm n-channel MOSFETs. The model used for the electrons is based on data from a full potential band structure calculation using the Local Density Approximation (LDA) to the Density Functional Theory (DFT). For the holes the transport is based on a three band k-p model including spin orbit interaction. The two polytypes are compared regarding surface mobilities obtained with the program, as well as transconductance, unit current gain frequency, carrier velocity, I-V characteristics and energy distribution in the channel for the MOSFETs.

Copyright

References

Hide All
1. Shenoy, J. N., Cooper, J. A. Jr and Melloch, M. R., IEEE Dev. Lett. 18, 93(1997).10.1109/55.556091
2. Spitz, J., Melloch, M. R., Cooper, J. A. Jr and Capano, A., IEEE Dev. Lett 19, 100(1998).10.1109/55.663527
3. Kdckell, P., Wenzien, B. and Bechstedt, F., Phys. Rev. B 50 (15) 10761 (1994).10.1103/PhysRevB.50.10761
4. Persson, C. and Lindefelt, U., J. Appl Phys. 82 (11), 5,496 (1997).10.1063/1.365578
5. Tsukioka, K., Vasileska, D. and Ferry, D. K., Physica B 185, 466(1993).10.1016/0921-4526(93)90279-F
6. Nilsson, H- E., Sannemo, U. and Petersson, C. S., J. Appl. Phys. 80 (6), 33653369 (1996).10.1063/1.363249
7. Schadt, M., Pensl, G., Devaty, R. P., Choyke, W. J., Stein, R. and Stephani, D., Appl. Phys. Lett. 65, 3120(1994).10.1063/1.112455
8. Schaffer, W. J., Negley, G. H., Irvine, K. G. and Palmour, J. W. in Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors, edited by Carter, C. H., Gildenbalt, G., Nakamura, S., and Nemanich, R., (Mater. Res. Soc. Proc. 339, Pittsburgh, PA 1994) pp. 595600.
9. Sangiorgi, E. and Pinto, M. R., IEEE Trans. on Elec. Dev. 39 (2), 356361 (1992).10.1109/16.121694
10. Fawcett, W., Boardman, A. D. and Swain, S., J. Phys. Chem. Solids, 31, 1963(1970).10.1016/0022-3697(70)90001-6
11. Avant! Corporation, TCAD Business Unit, Fremont, California. Medici, Two-Dimensional Device Simulation Program, Version 4.1, Users Manual, July 1998.

Full Band Monte Carlo Simulation of Short Channel MOSFETs in 4H and 6H-SiC

  • M. Hjelm (a1) (a2), H-E. Nilssoni (a1) (a2), E. Dubaric (a1) (a2), C. Persson (a3), P. Käckell (a4) and C. S. Petersson (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed