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Ftir Spectroscopy and Spectroscopic Ellipsometry Study of Nanocrystalline Layers Formed by High-Dose Hydrogen and Deuterium Implantation of Silicon

Published online by Cambridge University Press:  17 March 2011

L.N. Safronov ,
E.V. Spesivtsev ,
V.P. Popov ,
I.V. Antonova ,
A.K. Gutakovskii  and
V.I. Obodnikov
L.N. Safronov
Affiliation:
Institute of Semiconductor Physics, RAS, 630090, Lavrentieva 13, Novosibirsk, Russia, A.P. Stepovik, V.T. Gromov Federal Nuclear Center, Snezhinsk, Russia
E.V. Spesivtsev
Affiliation:
Institute of Semiconductor Physics, RAS, 630090, Lavrentieva 13, Novosibirsk, Russia, A.P. Stepovik, V.T. Gromov Federal Nuclear Center, Snezhinsk, Russia
V.P. Popov
Affiliation:
Institute of Semiconductor Physics, RAS, 630090, Lavrentieva 13, Novosibirsk, Russia, A.P. Stepovik, V.T. Gromov Federal Nuclear Center, Snezhinsk, Russia
I.V. Antonova
Affiliation:
Institute of Semiconductor Physics, RAS, 630090, Lavrentieva 13, Novosibirsk, Russia, A.P. Stepovik, V.T. Gromov Federal Nuclear Center, Snezhinsk, Russia
A.K. Gutakovskii
Affiliation:
Institute of Semiconductor Physics, RAS, 630090, Lavrentieva 13, Novosibirsk, Russia, A.P. Stepovik, V.T. Gromov Federal Nuclear Center, Snezhinsk, Russia
V.I. Obodnikov
Affiliation:
Institute of Semiconductor Physics, RAS, 630090, Lavrentieva 13, Novosibirsk, Russia, A.P. Stepovik, V.T. Gromov Federal Nuclear Center, Snezhinsk, Russia
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Abstract

Structural study of a-Si layers formed by high fluence hydrogen or deuterium implantation (up to 5×1017 cm−2) using high current beams with means of current up 40 mA/cm2 was carried out in the present work. The Si:H(D) silicon films were characterized using FTIR spectroscopy, spectroscopic ellipsometry, transmission electron microscopy and secondary ion mass spectrometry. Hydrogen solubility in crystalline silicon is low but ion implantation allows one to introduce hydrogen atoms in the concentration of 1022cm−3 or even more in thin silicon layer. High defect concentration in combination with high hydrogen activity causes the formation of mixed amorphous and crystalline phases with structure similar to silicon produced PECVD or laser ablation. The transformation of optical properties of this film during annealing in temperature range of 200-1050°C was investigated. The changes in optical characteristics and number of Si-H or Si-D bonds in the spectra of IR absorption is correlated with increase in crystalline volume of silicon with a temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A24.9
Copyright
Copyright © Materials Research Society 2000

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References

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