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Frequency Doubling of CW And Pulsed CO2 Lasers Using Diffusionbonded, Quasi-Phase-Matched Gaas Stacks

Published online by Cambridge University Press:  10 February 2011

Melvin C. Ohmer ,
Shekhar Guha ,
Ronald E. Perrin ,
Laura S. Rea ,
Phil Won Yu  and
Ayub Fathimulla
Melvin C. Ohmer
Affiliation:
USAF Research Laboratory, Materials Directorate Wright Patterson AFB, OH 45433
Shekhar Guha
Affiliation:
USAF Research Laboratory, Materials Directorate Wright Patterson AFB, OH 45433
Ronald E. Perrin
Affiliation:
USAF Research Laboratory, Materials Directorate Wright Patterson AFB, OH 45433
Laura S. Rea
Affiliation:
USAF Research Laboratory, Materials Directorate Wright Patterson AFB, OH 45433
Phil Won Yu
Affiliation:
USAF Research Laboratory, Materials Directorate Wright Patterson AFB, OH 45433
Ayub Fathimulla
Affiliation:
AlliedSignal Aerospace Co., Microelectronics & Technology Ctr, Columbia MD, 21045
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Abstract

We describe the fabrication, characterization and frequency doubling properties of first order stacks of diffusion bonded 2″ diameter GaAs wafers. Near IR imaging through the stacks indicated that excellent bonding was obtained over 40%–70% of the central area of the wafers. A power spectrum analysis of the spectral noise (due to interface reflections) appearing in the transmission data is shown to be a quantitative diagnostic tool useful for determining interface quality and for accurately estimating the thickness of the bonded layers in a stack. The conversion efficiency for a four layer stack at 10.6 microns was found to be 0.03% or 3 mJ for a 10 mJ pulse with a 100 nanosecond pulse length. The corresponding efficiency for cw SHG was found to be 0.0002%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 573
Copyright
Copyright © Materials Research Society 1998

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