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Free Carrier Absorption in N-Type 6H-SiC

Published online by Cambridge University Press:  21 February 2011

F. Engelbrecht  and
R. Helbig
F. Engelbrecht
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen, Germany
R. Helbig
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen, Germany
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Abstract

Free carrier absorption (FCA) in n-type 6H-SiC doped with nitrogen has been studied in the energy range 50–250 cm-1 using samples of different free carrier concentrations ranging from 2.0–1016cm-3 to 7.0–1017cm-3. The index of wave number dependence of FCA p varies between -1.4 and -0.55 depending on free carrier concentration and electron mobility. The experimental results are in good agreement with the classical expression for the FCA coefficient. Quantum mechanical expressions for the FCA coefficient do not reproduce the measured p values. It is supposed that this is due to fact that the requirement for the application of perturbation theory ΩT ≫ 1 is not fulfilled. We investigated the anisotropy of FCA with respect to the c-axis and find a strong difference between ∝ ┴ and ∝∥.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 631
Copyright
Copyright © Materials Research Society 1994

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References

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