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Fragmentation of C60 Molecules in Partially Ionized Fullerene Beam Deposition

Published online by Cambridge University Press:  15 February 2011

Zhong-Min Ren ,
Xia-Xing Xiong ,
Yuan-Cheng Du ,
Zhi-Feng Ying ,
Liang-Yao Chen  and
Fu-Ming Li
Zhong-Min Ren
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R. China
Xia-Xing Xiong
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R. China
Yuan-Cheng Du
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R. China
Zhi-Feng Ying
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R. China
Liang-Yao Chen
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R. China
Fu-Ming Li
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R. China
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Abstract

C60 films have been deposited using a partially ionized cluster beam deposition (PIBD) technique. The experimental results show that as Va. exceeds about 400 V almost all the C60 molecules fragmentate at collision with the substrate and the obtained films turn to be amorphous carbon layers at elevated Va, indicated by measurements of Raman spectra, X-ray diffraction, and ellipsometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 359: Symposium G – Science and Technology of Fullerene Materials , 1994 , 429
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1] Tong, W.M., Ohiderg, D.A.A., You, H.K., Williams, R.S., Anz, S.J., Alvarez, M.M., Whetten, R.I., Rubin, Y. andDieterich, F.N., J.Phys.Chem., 95(1991) 4709 Google Scholar
[2] Folsch, S., Maruno, T., Yamashita, A. and , Hayashi, Appl.Phys.Lett., 62(21)(1993) 2643 Google Scholar
[3] Dura, J.A., Pippenger, P.M., Halas, N.J., Xiong, X.Z., Chow, P.C. andMoss, S.C., AppLPhys.Lett. 63(25) (1993) 3443 Google Scholar
[4] Wragg, J.L., Chamderlain, J.E., White, H.W., Kratchmer, W., Huffman, D.R., Nature, 348(1990) 623 Google Scholar
[5] Li, Y.Z., Patrin, J.C., Chander, M., Weaver, J.H., Chibante, L.P. F., Smalley, R.E., Science, 252(1991)547 Google Scholar
[6] Yoshimoto, M., Arakane, T., Asakawa, T., HoriguchiK, K. Hirai andKoinuma, H., Jpn.J.Appl.Phys.,32 (1993) L–1081 Google Scholar
[7] Gaber, H., Busmann, H.G., Hiss, R., Hertel, I.V., Romberg, H., Fink, J., Bruder, F. andBrenn, R., J.Phys.Chem. 97 (1993) 8244 Google Scholar
[8] Busmann, H.G., Gaber, H., Strasser, H. andHertel, I.V., Appl.Phys.Lett. 64(1) (1994) 43 Google Scholar
[9] Ren, Z.M., Ying, Z.F., Xiong, X.X., He, M.Q., Li, Y.F., Li, F.M. andDu, Y.C., J.Phys.D, 27 1499(1994)Google Scholar
[10] Pichler, T., Matus, M., Kurti, J., andKuzmany, H., Solid State Comm., 81,(1992) 859 Google Scholar
[11] Saito, Y., Shinohara, H., Kato, M., Nagashima, H., Ohkohchi, M. andAndo, Y., Chem.Phys.Lett. 189, (1992) 236 Google Scholar