Skip to main content Accessibility help
×
Home

Formation of ZnSe/GaAs Heterovalent Heterostructures by Movpe

  • Mitsuru Funato (a1), Satoshi Aoki (a2), Shizυo Fujita (a1) and Shigeo Fujita (a1)

Abstract

ZnSe/GaAs (001) heterovalent heteгostructures are fabricated by metalorganic vapor phase epitaxy. During the growth, both GaAs and ZnSe surfaces are kept atomically flat to achieve precise control of the interface formation. Interface composition, Ga/As, are controlled by means of either Zn or Se treatment of a GaAs surface, and then ZnSe growth follows. Consequently, it is revealed by X-ray photoemission spectroscopy (XPS) that artificial control of Ga/As from 1.0 to 2.8 leads to the variation of valence band offsets from 0.6 to 1.1 eV. Based on the electron counting model and layer-attenuation model, it is proposed that the As plane just below the interface consists of As, anti-site Ga and As vacancy.

Copyright

References

Hide All
1 Nicolini, R., Vanzetti, L., Mula, G., Bratina, G., Soгba, L., Franciosi, A., Peressi, M., Baroni, S., Resta, R., Baldereschi, A., Angelo, J. E. and Gerrich, W. W., Phys. Rev. Lett. 72, 294 (1994)
2 Kley, A. and Neugebauer, J., Phys. Rev. B 50, 8616 (1994)
3 Dandrea, R. G., Froyen, S. and Zunger, A., Phys. Rev. B 42, 3213 (1990)
4 Kunc, K. and Martin, R. M., Phys. Rev. B 24, 3445 (1981)
5 Bratina, G., Vanzetti, L., Bonanni, A., Soгba, L., Paggel, J. J., Fгanciosi, A., Peluso, T. and Tapfer, L., J. Crystal Growth, 159, 703 (1996)
6 Grant, R. W., Waldrop, J. R., Kowalczyk, S. P. and Kraut, E. A., J. Vac. Sci. Technol. B 3, 1295 (1985)
7 Funato, M., Fujita, Sz. and Fujita, Sg., Jpn. J. Appl. Phys. 33, 4851 (1994)
8 Kamiya, I., Aspnes, D. E., Tanaka, H., Florez, L. T., Harbison, J. P. and Bhat, R., Phys. Rev. Lett., 68, 627 (1992)
9 Reinhardt, F., Richter, W., Müller, A. B., Gutsche, D., Kurpas, P., Ploska, L., Rose, K. C. and Zorn, M., J. Vac. Sci. Technol. B11, 1427 (1993)
10 Funato, M., Aoki, S., Fujita, Sz. and Fujita, Sg., Jpn. J. Appl. Phys. (submitted)
11 Chelluri, B., Chang, T. Y., Ouгmazd, A., Dayem, A. H., Zyskind, J. L. and Srivastava, A., Appl. Phys. Lett., 49, 1665 (1986)
12 Waldrop, J. R., Grant, R. W., Kowalczyk, S. P. and Kraut, E. A., J. Vac. Sci. Technol. A3, 835 (1985)
13 Li, D., Gonsalves, J. M., Otsuka, N., Qiu, J., Kobayashi, M. and Gunshoг, R. L., Appl. Phys. Lett. 57, 449 (1990)
14 Kuo, L. H., Kimura, K., Yasuda, T., Miwa, S., Jin, C. G., Tanaka, K. and Yao, M., Appl. Phys. Lett. 68, 2413 (1996)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed