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Formation of Ultra-Thin Silicon Oxynitride Films by Low-Energy Nitrogen Implantation.

Published online by Cambridge University Press:  21 February 2011

J. A. Diniz ,
P. J. Tatsch ,
L. C. Kretly ,
J. E. C. Queiroz  and
J. Godoy Fo
J. A. Diniz
Affiliation:
DSIF/FEE- UNIVERSITY OF CAMPINAS (UNICAMP), Campinas-SP-Brazil-cp, 6101-cep. 13.081-970, diniz@fee.unicamp.br.
P. J. Tatsch
Affiliation:
DSIF/FEE- UNIVERSITY OF CAMPINAS (UNICAMP), Campinas-SP-Brazil-cp, 6101-cep. 13.081-970, diniz@fee.unicamp.br.
L. C. Kretly
Affiliation:
CCS/UNICAMP, Campinas, SP-Brazil-cp.6061-cep. 13.081-970.
J. E. C. Queiroz
Affiliation:
CCS/UNICAMP, Campinas, SP-Brazil-cp.6061-cep. 13.081-970.
J. Godoy Fo
Affiliation:
CCS/UNICAMP, Campinas, SP-Brazil-cp.6061-cep. 13.081-970.
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Abstract

Oxynitrides (SiOxNy) have been used as gate insulators for submicron devices [1]. The present work reports the oxynitride formation at SiO2/Si structure by N2+ implantation at low energies. Si substrates were implanted with N2+ ion beams (energy = 5.6 keV and dose =1×10 ions/cm2), annealed at 950°C for 30 min in N2 ambient, oxidized at 950°C in O2 + 1% TCE environment and annealed at 950°C for 30 min in N2. After these process steps, the oxynitride formation was investigated by FTIR, SIMS and ellipsometric analysis. These physical characterizations revealed the presence of Si-0 and Si-N bonds. The film thicknesses and refractive indexes were 7 nm and 1.62, respectively. The dielectric constant = 4.39 and effective charge density = 7xl010 cm–2 were determined by C-V, indicating that the SiOxNy films formed are suitable gate insulators for MOS devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 249
Copyright
Copyright © Materials Research Society 1996

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