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Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

M. C. Tamargo ,
M.J.S.P. Brasil ,
R. E. Nahory ,
D. E. Aspnes ,
B. Philips ,
D. M. Hwang ,
S. A. Schwarz  and
W. E. Quinn
M. C. Tamargo
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701
M.J.S.P. Brasil
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701
R. E. Nahory
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701
D. E. Aspnes
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701
B. Philips
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701
D. M. Hwang
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701
S. A. Schwarz
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701
W. E. Quinn
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701
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Abstract

We investigate the formation of inAs-rich layers at the interface between InP and arsenicbased Ill-V alloys grown by chemical beam epitaxy (CBE). In-situ spectroscopic ellipsometry, low temperature photoluminescence, secondary ion mass spectrometry and transmission electron microscopy were used to characterize the formation of these layers. We present evidence for interfacial layer roughness that depends strongly on growth temperature and on the presence of surface steps, and show that modifications of the interface chemistry and of the gas-switching sequence can reduce interfacial layer thicknesses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 267
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Brasil, M.J.S.P., Nahory, R.E., Quinn, W.E., Tamargo, M.C., Farrell, H.H., Appl. Phys. Lett. 60, 1981 (1992).Google Scholar
2. Aspnes, D. E., J. Mater. Ed. 7, 849 (1985).Google Scholar
3. Bonner, W. E., private communication.Google Scholar
4. Warwick, C.A., Jan, W. Y., Ourmazd, A., Harris, T. D., APPL. Phys. Lett. 56, 2666 (1990).Google Scholar
5. Carlin, J.F., Houdre, R., Rudra, A., Illegems, M., Appl. Phys. Lett. 59, 3018 (1992).Google Scholar
6. Hull, R. and Bean, J.C. in “Strained Layer Superlattices: Material Science and Technology”, Pearsall, T. P., ed. Academic Press, 1991.Google Scholar