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Formation of Stacking Faults and Misfit Dislocations During Zn Diffusion-Enhanced Intermixing of a GaInAsP/InP Heterostructure

Published online by Cambridge University Press:  25 February 2011

Hyo-Hoon Park ,
Eun Soo Nam ,
Yong Tak Lee ,
El-Hang Lee ,
Jeong Yong Lee  and
O'Dae Kwon
El-Hang Lee
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8, Daeduk Science Town, Daejeon 305-606
Jeong Yong Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daeduk Science Town, Daejeon 305-701
O'Dae Kwon
Affiliation:
Department of Electrical Engineering, Pohang Institute of Science and Technology, Pohang, Kyungbuk 790-330, Republic of Korea
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Abstract

The microstructural degradation of a lattice-matched Ga0.28 In0.72As0.61P0.39/InP heterointerface during atomic intermixing induced by Zn diffusion has been investigated using high-resolution transmission electron microscopy and Auger electron spectroscopy. The localized interfacial stress caused by intermixing appears to create stacking faults in the Ga-mixed InP substrate, and dislocation tangles in the In-mixed GalnAsP layer. The results are attributed to the contrasted effect of tensile and compressive stresses upon the nucleation of partial dislocations from both sides of the intermixed interface. A qualitative model is proposed for the homogeneous nucleation of misfit dislocations from the locally stressed interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 591
Copyright
Copyright © Materials Research Society 1991

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References

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