Hostname: page-component-84b7d79bbc-g5fl4 Total loading time: 0 Render date: 2024-07-26T02:43:52.983Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet

Published online by Cambridge University Press:  15 March 2011

Ryota Ohtani ,
Yoshifumi Ikoma  and
Teruaki Motooka
Ryota Ohtani
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, JAPAN
Yoshifumi Ikoma
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, JAPAN
Teruaki Motooka
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, JAPAN
Get access

Abstract

We have investigated the formation and current-voltage characteristics of Si-dots/SiC multilayer heterostructures on p+Si(100) substrates by means of supersonic free-jet chemical vapor deposition using a single gas source CH3SiH3. Si-dots were successfully deposited on epitaxial SiC thin films on Si(100) with assistance of a tungsten hot filament. Negative deferential resistance was observed in the current-voltage curve of SiC/Si-dot/SiC measured by an atomic force microscope using a gold-coated conductive cantilever. The observed current-voltage characteristics can be attributed to the hole resonant tunneling through the SiC double barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.11
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Davis, R. F., Kelner, G., Shur, M., Palmour, J. W. and Edmond, J.A., Proc. IEEE 79, 677 (1991).Google Scholar
[2] Mehregany, M., Zorman, C.A., MRS Bull. 26, 289 (2001).Google Scholar
[3] Baumann, U., Pezoldt, J., Cimalla, V., Nennewitz, O., Schwierz, F. and Schipanski, D., Institute of Physics Conference Series 142 (Institute of Physics, Bristol, 1996) p. 149.Google Scholar
[4] Brown, E. R., in Heterostructures and Quantum Devices (Academic Press, 1994) p. 305.Google Scholar
[5] Ikoma, Y., Endo, T., Watanabe, F. and Motooka, T., Jpn. J. Appl. Phys. Part 2 38, L301 (1998).Google Scholar
[6] Ikoma, Y., Endo, T., Watanabe, F. and Motooka, T., Appl. Phys. Lett. 75, 3977 (1999).Google Scholar
[7] Ikoma, Y., Endo, T., Tada, T., Watanabe, F. and Motooka, T., Mater. Sci. Forum 338–342, 265 (2000).Google Scholar
[8] Ikoma, Y., Tada, T., Uchiyama, K., Watanabe, F. and Motooka, T., Solid State Phenom. 78–79, 157 (2001).Google Scholar
[9] Ikoma, Y., Uchiyama, K., Watanabe, F. and Motooka, T., Mater. Sci. Forum 389–393, 751 (2002).Google Scholar
[10] Ikoma, Y., Ohtani, R. and Motooka, T., Mater. Sci. Forum 457–460, 325 (2004)Google Scholar
[11] Frensley, W. R., in Heterostructures and Quantum Devices (Academic Press, 1994) p. 273.Google Scholar
[12] Waldrop, J. R. and Grant, R. W., Appl. Phys. Lett. 56, 557 (1990).Google Scholar
[13] Michaelson, H. B., J. Appl. Phys. 48, 4729 (1977).Google Scholar