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Formation of Silicon Nitride films Newly Developed by the Ion and Vapour Deposition Method

Published online by Cambridge University Press:  26 February 2011

F. Sugawara ,
T. Ajioka ,
F. Ichikawa  and
S. Ushio
F. Sugawara
Affiliation:
VLSI Research and Develpment Center OKI Electric Industry Co., Ltd. Hachioji, Tokyo 193, JAPAN
T. Ajioka
Affiliation:
VLSI Research and Develpment Center OKI Electric Industry Co., Ltd. Hachioji, Tokyo 193, JAPAN
F. Ichikawa
Affiliation:
VLSI Research and Develpment Center OKI Electric Industry Co., Ltd. Hachioji, Tokyo 193, JAPAN
S. Ushio
Affiliation:
VLSI Research and Develpment Center OKI Electric Industry Co., Ltd. Hachioji, Tokyo 193, JAPAN
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Abstract

The Ion and vapour deposition method (IVD method) has been used for the first time to form silicon nitride films. Silicon nitride formation using IVD method, which consists of a nitrogen ion implantation and a simultaneous electron beam evaporation of silicon, has been confirmed.

These silicon nitride films formed by IVD method have been characterized using FTIR, ellipsometry and AES analyses. It has been observed that these IVD silicon nitride films characteristics are sensitive to the nitrogen ion implantation conditions and the silicon evaporation rate.

Applications of these IVD films to selective oxidation have exhibited a good resistance to oxidation. It has also permitted the bird's beak to be reduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 535
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Minegishi, K., Imai, K., Hirata, K., and Yoriume, Y., Jpn. J. Appl. Phys., 20, 55(1981)Google Scholar
2. Chiu, K.Y., Moli, J.L., and Manoliu, J., J. Solids-State circuits, 17, 166(1982)Google Scholar
3. Shibata, T., Nakayama, R., Kurosawa, K., Onga, S., Konaka, M., and Iizuka, H., IEDM. Tech. Dig., 27(1983)Google Scholar
4. Chiu, T.Y., Bernt, H., and Ruge, I., J. Electrochem. Soc., 129, 408(1982)Google Scholar
5. Kim, M.J. and Ghezzo, M., J. Electrochem. Soc., 131, 1934 (1984)Google Scholar
6. Troxell, J.R. and Moss, D.E., J. Electrochem. Soc., 131, 2353 (1984)Google Scholar
7. Tsujide, T., Nojiri, M., and Kitagawa, H., J. Appl. Phys., 51, 1605(1980)Google Scholar
8. Izumi, K., Doken, M., and Ariyoshi, H., El. Letters, 14, 593(1978)Google Scholar
9. Thomas, G.E., Beckers, L.J., Habraken, F.H.P.H., and Kuipen, A.E.T., Appl. Phys. Lett., 41, 56(1982)Google Scholar
10. Satou, M. and Fujimori, F., Jpn. J. Appl. Phys., 22, 171(1983)Google Scholar
11. Satou, M., Matuda, K. and Fujimoto, F., Proc. 6th symp. Ion Sourcelon-Assisted, Tech., 425(Tokyo, 1982)Google Scholar
12. Knolle, W.R. and Osenbach, J.W., J. Appl. Phys., 58, 1248(1985)Google Scholar
13. Chiu, T.Y., Oldham, W.G., and Hovland, C., The Electrochem. Soc. Extended Abstracts, 204(1983)Google Scholar