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The Formation of Silicon Clusters in Plasma-Enhanced Chemically Vapour Deposited Si:O:H:F Alloys

  • A. G. Dias (a1) and J. Figueiredo (a1)

Abstract

The structural and optoelectronic properties of a new plasma-enhanced chemically vapour deposited Si:O:H:F alloy are reported taking into account respectively the results from X-ray diffraction, Raman and infrared absorption spectroscopy analysis and from dark and photo conductivity and optical absorption measurements. Films produced with a F2/SiH4 gas ratio (r) lower or equal than 0.4 are amorphous semiconducting Si:O:H:F alloys, whereas films deposited with r≤0.5 exhibit a multiphase structure consisting of silicon clusters embedded in an amorphous insulating fluorine doped silicon oxide tissue. The formation of silicon clusters is the result of a segregation process of the fluorine and oxygen atoms in the amorphous Si:O:H:F matrix.

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The Formation of Silicon Clusters in Plasma-Enhanced Chemically Vapour Deposited Si:O:H:F Alloys

  • A. G. Dias (a1) and J. Figueiredo (a1)

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