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Formation of Porous Silicon Layers on Insulating Substrate for Microbridge – Type Sensor Applications

Published online by Cambridge University Press:  01 February 2011

Sergey Ya. Andrushin ,
Leonid A. Balagurov ,
Sue C. Bayliss ,
Galina V. Liberova ,
Elena A. Petrova ,
Bayram Unal  and
Dmitrii G. Yarkin
Sergey Ya. Andrushin
Affiliation:
Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russia
Leonid A. Balagurov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russia
Sue C. Bayliss
Affiliation:
Faculty of Health and Life Sciences, De Montfort University, Leicester, LE1 9BH, UK
Galina V. Liberova
Affiliation:
Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russia
Elena A. Petrova
Affiliation:
Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russia
Bayram Unal
Affiliation:
Faculty of Health and Life Sciences, De Montfort University, Leicester, LE1 9BH, UK
Dmitrii G. Yarkin
Affiliation:
Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russia
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Abstract

Formation processes of porous silicon on insulating substrate were studied. It was demonstrated that both electrochemical and chemical formation methods allow to transform heavily doped p-type polycrystalline silicon into homogeneous porous silicon. Porous silicon was successfully used as sacrificial layer in the fabrication process of microbridge structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A5.6
Copyright
Copyright © Materials Research Society 2005

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References

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