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Formation of Porous Silicon Layers on Insulating Substrate for Microbridge – Type Sensor Applications
Published online by Cambridge University Press: 01 February 2011
Abstract
Formation processes of porous silicon on insulating substrate were studied. It was demonstrated that both electrochemical and chemical formation methods allow to transform heavily doped p-type polycrystalline silicon into homogeneous porous silicon. Porous silicon was successfully used as sacrificial layer in the fabrication process of microbridge structures.
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- Copyright © Materials Research Society 2005