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Formation of Mn-As Centers in In1-xMnxAs Diluted Magnetic Semiconductors

Published online by Cambridge University Press:  15 February 2011

A. Krol ,
Y. L. Soo ,
Z. H. Ming ,
Y. H. Kao ,
H. Munekata  and
L. L. Chang
A. Krol
Affiliation:
Department of Physics, State University of New York at Buffalo, New York 14260
Y. L. Soo
Affiliation:
Department of Physics, State University of New York at Buffalo, New York 14260
Z. H. Ming
Affiliation:
Department of Physics, State University of New York at Buffalo, New York 14260
Y. H. Kao
Affiliation:
Department of Physics, State University of New York at Buffalo, New York 14260
H. Munekata
Affiliation:
IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598.
L. L. Chang
Affiliation:
IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598.
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Abstract

XAFS spectra at the Mn K-edge were obtained for films of In1-xMnxAs (0.0014 ≤x ≤ 0.12) grown by MBE method at two different substrate temperatures Ts, = 200–210 °C and Ts, = 280–300 ° C. It has been found that Mn-As complexes which consist of a central Mn atom surrounded by six neighboring As most likely arranged in the form of a distorted trigonal antiprism with one or two additional Mn atoms placed on the long axis of the antiprism, can substitute for the In-As tetrahedron in the undistorted zincblende structure. For a composition of x = 0.12 we have found the formation of MnAs clusters with NiAs-like structure in the high-growth-temperature samples. We thus conclude that the magnetic properties of the In1-xMnx As semiconductors are mainly determined by the formation and local structure ol'the Mn-As complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 290: Symposium N – Dynamics in Small Confining Systems , 1992 , 245
Copyright
Copyright © Materials Research Society 1993

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