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Formation of Intrinsic Defects at MBE-Grown GaAs/AlAs Interfaces

Published online by Cambridge University Press:  15 February 2011

P. Krispin ,
R. Hey ,
H. Kostial  and
M. Höricke
P. Krispin
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D - 1086 Berlin, Germany
R. Hey
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D - 1086 Berlin, Germany
H. Kostial
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D - 1086 Berlin, Germany
M. Höricke
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D - 1086 Berlin, Germany
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Abstract

We report on a detailed investigation of MBE-grown isotype silicon-doped heterostructures by capacitance/voltage (C/V) technique and deep-level transient spectroscopy (DLTS). A sequence of electrically active defects is found. By depth profiling of the density of the dominant levels it is demonstrated that the corresponding defects are concentrated at the GaAs-on-AlAs (inverted) interface. By comparison with studies on irradiation-induced levels in LPE- or VPE-grown AlGaAs we conclude that the defects at the GaAs/AlAs interface are most probably linked to different charge states of the arsenic vacancy VAs and VAs−ASi pairs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 89
Copyright
Copyright © Materials Research Society 1993

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