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Formation of High-Quality Si/CoSi2/Si Double Hetero-Structures by Self-Aligned and Two-Step Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

Masanobu Miyao ,
Takashi Ohshima ,
Nobuo Nakamura  and
Kiyokazu Nakagawa
Masanobu Miyao
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, JAPAN
Takashi Ohshima
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, JAPAN
Nobuo Nakamura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, JAPAN
Kiyokazu Nakagawa
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, JAPAN
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Abstract

The formation and application of Si/CoSi2/Si double heterostructures are comprehensively studied. A high-quality double heterostructure is formed by two-step molecular beam epitaxy of the Si over layer, i.e., low -temperature growth followed by high-temperature growth. The interfaces between CoSi2 and Si observed by cross-sectional transmission microscopy are atomically abrupt and smooth. In addition, a new fine patterning method of CoSi2 films using self-aligned and selective growth is developed. Finally, permeable base transistors (PBT) with high performance (gm=50 mS /mm) are fabricated using these new techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 275
Copyright
Copyright © Materials Research Society 1990

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References

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