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The Formation of Highly Conductive Shallow Junction Layers in (100) Siliconl By Gallium Ion Implantation

Published online by Cambridge University Press:  28 February 2011

H.B. Harrison ,
Y.H. Li ,
G.A. Sai-Halasz  and
S. Iyer
H.B. Harrison
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Australia, 3000.
Y.H. Li
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Australia, 3000.
G.A. Sai-Halasz
Affiliation:
I.B.M., T.J. Watson Research Centre, Yorktown Heights, New York, U.S.A.
S. Iyer
Affiliation:
I.B.M., T.J. Watson Research Centre, Yorktown Heights, New York, U.S.A.
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Abstract

This paper presents the results obtained from a comparative study of ion implanted Gallium (Ga) into (100), n type Silicon. A comparison is made between long time (≥ 30 mins) furnace annealed and Rapid Thermally Processed (RTP), 100keV implants of 1 and 3×10l5/cm2 doses of Ga. The results show that for RTP an extremely high substitutional concentration of Gallium, in excess of 3×1020/cm3 can be obtained with approximately 100% electrical activation, resulting in highly conductive very shallow p type layers.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 223
Copyright
Copyright © Materials Research Society 1986

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References

1. Tsai, M.Y., Streetman, S.G., Deline, V.R. and Evans, C.A. Jr, Journal of Electronic Materials, Vol.8. No.2, p111, 1979.CrossRefGoogle Scholar
2. Trumbore, F.A., Bell. Syst. Tech. J. 39, p205, 1960.Google Scholar
3.Heatpulse 410, ‘Rapid Thermal Processor’, Associates, A.G., 1985.Google Scholar
4. Crowder, Billy L., J. Electrochem. Soc. Solid State Science 118, p943, 1971.Google Scholar
5. Seidel, T.E., Lischner, D.J., Pai, C.S., Knoell, R.V., Maher, D.M. and Jacobson, D.C., Nuclear Inst. & Meth. in Phys. Res. B7/8, p251, 1985.Google Scholar