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Formation of Double Layered SOI With Controlled Crystal Orientation

Published online by Cambridge University Press:  28 February 2011

Toshiaki Miyajima ,
Hideyuki Tsuji ,
Masashi Maekawa  and
Masayoshi Koba
Toshiaki Miyajima
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto, Tenri, Nara 632, JAPAN
Hideyuki Tsuji
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto, Tenri, Nara 632, JAPAN
Masashi Maekawa
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto, Tenri, Nara 632, JAPAN
Masayoshi Koba
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto, Tenri, Nara 632, JAPAN
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Abstract

For the crystal orientation control of multi-layered SOI (Silicon on Insulator) by the laser recrystallization technology, the shape and size of seeds were investigated. By utilizing dot seeds less than 3μm square instead of a line seed, the crystal orientation control of a SOI layer was successfully realized without causing evaporation of silicon. Moreover, the dot seed method enabled us to control the crystal orientation of multi-layered SOI by virtue of small heat flow through seed regions.

In the mean time, it was proved that the SOI crystal orientation gradually rotated as the crystal propagated away from the seeds and that the degree of rotation in the second SOI layer was smaller than that in the first one.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 397
Copyright
Copyright © Materials Research Society 1988

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