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Formation of CoSi2 Wires by Maskless Implantation with the Focused Ion Beam

  • J. Teichert (a1), L. Bischoff (a1), E. Hesse (a1), D. Panknin (a1) and W. Skorupa (a1)...


The maskless ion implantation with the focused ion beam as a new method for ion beam synthesis of cobalt sulicide wires is presented. In order to perform the implantation a special achromatic mass separator was implemented into the ion column, liquid alloy ion sources for cobalt ions were developed and a substrate heating was built. Ion implantation was performed with 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.



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