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Formation of CdTe and GaAs by Electrochemical Atomic Layer Epitaxy (ECALE)

Published online by Cambridge University Press:  16 February 2011

D. Wayne Suggs ,
Ignacio Villegas ,
Brian W. Gregory  and
John L. Stickney
D. Wayne Suggs
Affiliation:
School of Chemical Sciences, University of Georgia, Athens, Georgia 30602
Ignacio Villegas
Affiliation:
School of Chemical Sciences, University of Georgia, Athens, Georgia 30602
Brian W. Gregory
Affiliation:
School of Chemical Sciences, University of Georgia, Athens, Georgia 30602
John L. Stickney
Affiliation:
School of Chemical Sciences, University of Georgia, Athens, Georgia 30602
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Abstract

The principles of Atomic Layer Epitaxy (ALE) have been applied to the formation of compound semiconductors by an electrochemical technique, referred to as Electrochemical Atomic Layer Epitaxy (ECALE). Atomic layers of the component elements are alternately electrodeposited at underpotential (UPD) from separate solutions and at separate potentials. Results are presented concerning the structures of both CdTe and GaAs deposits formed by ECALE. Studies were performed using singlecrystalline Au electrodes in a UHV surface analysis instrument coupled directly with an electrochemical cell. This instrument was used in order to prevent corruption by contact with air during transfer to the surface analysis environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 283
Copyright
Copyright © Materials Research Society 1991

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References

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