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Formation of Buried Porous Silicon Structure by Hydrogen Plasma Immersion Ion Implantation

Published online by Cambridge University Press:  15 February 2011

Z. Fan ,
Paul K. Chu ,
X. Lu ,
S. S. K. Iyer  and
N. W. Cheung
Z. Fan
Affiliation:
Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
Paul K. Chu
Affiliation:
Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
X. Lu
Affiliation:
Plasma Assisted materials Processing Laboratory, Department of Electrical Engineering andComputer Sciences, University of California at Berkeley, CA 94720
S. S. K. Iyer
Affiliation:
Plasma Assisted materials Processing Laboratory, Department of Electrical Engineering andComputer Sciences, University of California at Berkeley, CA 94720
N. W. Cheung
Affiliation:
Plasma Assisted materials Processing Laboratory, Department of Electrical Engineering andComputer Sciences, University of California at Berkeley, CA 94720
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Abstract

Plasma Immersion Ion Implantation (PIII) excels in several areas over conventional ion implantation, for example, higher dose, shorter implantation time, and lower overall cost. The technique can be used to fabricate buried porous silicon. In our experiment, hydrogen is implanted into Si by PIII at 5–30kV to form underlying porous silicon (PS) which emits light at an energy higher than the Si bandgap. The optical properties of the PS samples as measured by photoluminescence are quite good. The PHI technique therefore offers an alternative means to fabricate buried porous silicon structures which can potentially be used to fabricate optoelectronic devices in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 427
Copyright
Copyright © Materials Research Society 1997

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References

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