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Formation of Buried Oxynitride Layer into Silica Glass using Ion Beam

  • Keiji Oyoshi (a1), Takashi Tagami (a1) and Shuhei Tanaka (a1)

Abstract

Both silicon and nitrogen implanted silica glasses were characterized by SIMS, XPS and SEM. Bubbles appeared in the implanted region at the high dose implantation (the silicon to nitrogen dose ratio is 0.75 and the total dose is 4×10 ions/cm2). Suppression methods of bubble formation were discussed concerning about the nitrogen implantation.

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1 Mazzoldi, P. and Arnold, G.W., Ion Beam Modification of Insulators, (Elsevier, Amsterdam, 1987).
2 Chengyu, W., Ying, T. and Shuchu, W., J.Non-Crystalline Solids, 52, 589 (1982).
3 Naik, I.K., Appl. Phys. Lett., 43, 519 (1983).
4 Tagami, T., Oyoshi, K. and Tanaka, S. in Processing and Characterization of Materials Using Ion Beams, edited by Rehn, L.E., Greene, J. and Smidt, F.A. (Mater. Res. Soc. Proc. 128, Pittsburgh, PA 1989) pp.519524.
5 Arnold, G.W., Brow, R.K. and Myers, D.R., Phys. and Chem. Glass Surface Proc.(to be published).
6 Raider, S.I., Flitsch, R., Aboaf, J.A. and Pliskin, W.A., J.Electro- chem. Soc, 123, 560 (1976).

Formation of Buried Oxynitride Layer into Silica Glass using Ion Beam

  • Keiji Oyoshi (a1), Takashi Tagami (a1) and Shuhei Tanaka (a1)

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