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Formation of Buried Oxide in Silicon by High-Dose Oxygen Implantation, and Application of this Technology to CMOS Devices

Published online by Cambridge University Press:  22 February 2011

K. Izumi ,
Y. Omura  and
S. Nakashima
K. Izumi
Affiliation:
Atsugi Electrical Communication Laboratory, N.T.T., Atsugi-shi, Kanagawa 243–01, Japan
Y. Omura
Affiliation:
Atsugi Electrical Communication Laboratory, N.T.T., Atsugi-shi, Kanagawa 243–01, Japan
S. Nakashima
Affiliation:
Atsugi Electrical Communication Laboratory, N.T.T., Atsugi-shi, Kanagawa 243–01, Japan
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Abstract

SIMOX (Separation by Implanted Oxygen) technology has been developed for realization of oxygen-ion implanted SOI. The distribution of implanted oxygen was analyzed by Auger electron spectroscopy and Rutherford backscattering spectroscopy. The properties of the silicon oxide formed by oxygenion implantation were investigated by infrared spectra, capacitance-voltage characteristics, dielectric strength, and dielectric constants. The crystallinity of the top layer silicon and of the epitaxially-grown silicon layer was deter mined by electron-beam diffraction. An electric-field-shielding effect was observed in the polycrystalline silicon region which was formed between the top layer silicon and the buried oxide. High-speed digital and high-voltage analogue CMOS LSIs, a 1kb CMOS RAM and a BSH LSI, were successfully fabricated using SIMOX technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 443
Copyright
Copyright © Materials Research Society 1984

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References

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