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Formation of Buried Nitride Layers in (110) Silicon

Published online by Cambridge University Press:  28 February 2011

Abhaya K. Datye ,
Vidya S. Kaushik ,
Don L. Kendall ,
Bernardo Martinez-Tovar  and
David R. Myers
Abhaya K. Datye
Affiliation:
Dept of Chemical and Nuclear Engineering
Vidya S. Kaushik
Affiliation:
Dept of Chemical and Nuclear Engineering
Don L. Kendall
Affiliation:
Dept. of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131.
Bernardo Martinez-Tovar
Affiliation:
Dept. of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131.
David R. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
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Abstract

High fluence ion implantation of N (1x1018/cm2 at 150 keV) has been used to form buried nitride layers in (110) silicon. After annealing at 1200 C for 5 hrs. a continuous, polycrystalline alpha-Si,N- layer (200 nm thick) is observed beneath a surface silicon film 306 nm thick. The upper Si/Si3N4 interface appears to be more abrupt than that observed in (100) silicon with minimal dendritic intergrowth and no evidence for microtwinning in the silicon. Furthermore, a band of nitride precipitates can be detected 500 nm below the continuous nitride layer. These nitride precipitates grow semi-coherently within the silicon with no observable strain or misfit dislocations within the silicon. The nitride precipitates are internally faulted to accomodate the 10% lattice mismatch in the (0001) nitride direction. Short term anneals reveal that the precipitates have fully crystallized within 10 min. at 1200 C while the continuous nitride layer is still amorphous.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 461
Copyright
Copyright © Materials Research Society 1988

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References

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