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Formation of (1120) ZnO Films by Controlling the Selftexture and the Relaxation of Film Stress

Published online by Cambridge University Press:  25 February 2011

Takao Yamaguchi ,
Norifumi Fujimura ,
Seiki Goto  and
Taichiro Ito
Takao Yamaguchi
Affiliation:
Graduate school, Univ. of Osaka Prefecture, College of Engineering, Sakai, Osaka, 593, JAPAN
Norifumi Fujimura
Affiliation:
Univ. of Osaka Prefecture, College of Engineering, Sakai, Osaka, 593, JAPAN
Seiki Goto
Affiliation:
Graduate school, Univ. of Osaka Prefecture, College of Engineering, Sakai, Osaka, 593, JAPAN
Taichiro Ito
Affiliation:
Univ. of Osaka Prefecture, College of Engineering, Sakai, Osaka, 593, JAPAN
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Abstract

ZnO film has a tendency to grow parallel to the <0001> axis. Therefore, it is difficult to obtain epitaxial or oriented films with any other orientation. Nevertheless, we obtained excellent epitaxial (1120) ZnO films on R-cut, (0112), sapphire by controlling the self-texture. Epitaxial (1120) ZnO on R-cut sapphire exhibits an anisotropic misfit at the interface. To clarify the growth mechanism, the stress relaxation was calculated by measuring the curvature of the substrate and the lattice spacings. The change in stress calculated by these two methods differs from each other. We discuss this discrepancy in terms of the growth mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 297
Copyright
Copyright © Materials Research Society 1992

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References

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