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Formation and stability of enhanced superhard nanostructured AlN/VN and AlN/TiN superlattice materials

Published online by Cambridge University Press:  11 February 2011

C. Stampfl
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208–3112
A. J. Freeman
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208–3112
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Abstract

Using density functional theory and the full-potential linearized augmented plane wave (FLAPW) method, we investigate the formation and stability, and atomic structure, of rocksalt AlN/TiN and AlN/VN systems, including properties of the clean surfaces of the constituent materials. Calculations of the adlayer formation energy highlights the effect and interplay of the various energetic contributions on the growth of these strained systems, where the so-called “surface-interface” interaction energy is found to be important for the initial stages of AlN epitaxy. A significant strain energy builds up for increasing number of layers, where it is greater in the AlN/TiN system, which limits the thickness of rocksalt AlN regions that can grow before a structural transition to the lower energy wurtzite phase takes place. From our calculations, together with the known experimental critical thicknesses, we can obtain an accurate estimate of the wurtzite/substrate interface energy. That these values are high explains why the metastable rocksalt phase, which has significantly lower interface energies, is stabilized.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Veprěek, S., J. Vac. Sci. Technol. A 17, 2401 (1999).Google Scholar
2. Helmersson, U., Todorova, S., Barnett, S. A., Sundgren, J.-E., Markert, L. C., and Greene, J. E., J. Appl. Phys. 62, 481 (1987).Google Scholar
3. Li, Q., Kim, I. W., Barnett, S. A., and Marks, L. D., Appl. Phys. Lett. 78, 892, (2001).Google Scholar
4. Madan, A., Kim, I. W., Cheng, S. C., Yashar, P., Dravid, V. P., and Barnett, S. A., Phys. Rev. Lett. 78, 1743 (1997).Google Scholar
5. Wimmer, E., Krakauer, H., Weinert, M., and Freeman, A. J., Phys. Rev. B 24, 864 (1981).Google Scholar
6. Weinert, M., Wimmer, E., and Freeman, A. J., Phys. Rev. B 26, 4571 (1982).Google Scholar
7. Yu, R., Krakauer, H., and Singh, D., Phys. Rev. B 45, 8671 (1991).Google Scholar
8. Hedin, L. and Lundqvist, B. I., J. Phys. C 4, 2064 (1971).Google Scholar
9. Stampfl, C. and Freeman, A. J., to be published.Google Scholar
10. Tsao, J. Y., Material Fundamentals of Molecular Beam Epitaxy (Academic, San Diego, 1993) pp. 232.Google Scholar
11. Di Felice, R. and Northrup, J. E., Phys. Rev. B 56, 9213 (1997).Google Scholar
12. Stampfl, C. and Freeman, A. J., Phys. Rev. B 63, 155106 (2001).Google Scholar
13. Stampfl, C., Asahi, R., Freeman, A. J., Phys. Rev. B 65, 161204(R) (2002).Google Scholar
14. Northrup, J. E., Di Felice, R., and Neugebauer, J., Phys. Rev. B 55, 13878 (1997).Google Scholar