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Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN

Published online by Cambridge University Press:  01 February 2011

O. Gelhausen ,
M. R. Phillips ,
E. M. Goldys ,
T. Paskova ,
B. Monemar ,
M. Strassburg  and
A. Hoffmann
O. Gelhausen
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, Australia
M. R. Phillips
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, Australia
E. M. Goldys
Affiliation:
Division of Information and Communication Sciences, Macquarie University, North Ryde, NSW 2109, Australia
T. Paskova
Affiliation:
Material Science Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
B. Monemar
Affiliation:
Material Science Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
M. Strassburg
Affiliation:
Institute for Solid-State-Physics, Technical University Berlin, 10623 Berlin, Germany Department of Physics and Astronomy, Georgia State University, Atlanta, GA-30303, USA
A. Hoffmann
Affiliation:
Institute for Solid-State-Physics, Technical University Berlin, 10623 Berlin, Germany
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Abstract

Moderately and heavily Mg-doped GaN were studied by a combination of post-growth annealing processes and electron beam irradiation techniques during cathodoluminescence (CL) to elucidate the chemical origin of the recombination centers responsible for the main optical emission lines. The shallow donor at 20–30 meV below the conduction band, which is involved in the donor-acceptor-pair (DAP) emission at 3.27 eV, was attributed to a hydrogen-related center, presumably a (VN-H) complex. Due to the small dissociation energy (<2 eV) of the (VN-H) complex, this emission line was strongly reduced by low-energy electron irradiation. CL investigations of the DAP at a similar energetic position in Si-doped (n-type) GaN indicated that this emission line is of different chemical origin than the 3.27 eV DAP in Mg-doped GaN. A slightly deeper DAP emission centered at 3.14 eV was observed following low-energy electron irradiation, indicating the appearance of an additional donor level with a binding energy of 100–200 meV, which was tentatively attributed to a VN-related center. The blue band (2.8–3.0 eV) in heavily Mg-doped GaN was found to consist of at least two different deep donor levels at 350±30 meV and 440±40 meV. The donor level at 350±30 meV was strongly affected by electron irradiation and attributed to a H-related defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.20
Copyright
Copyright © Materials Research Society 2004

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