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Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN

Published online by Cambridge University Press:  01 February 2011

O. Gelhausen
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, Australia
M. R. Phillips
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, Australia
E. M. Goldys
Affiliation:
Division of Information and Communication Sciences, Macquarie University, North Ryde, NSW 2109, Australia
T. Paskova
Affiliation:
Material Science Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
B. Monemar
Affiliation:
Material Science Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
M. Strassburg
Affiliation:
Institute for Solid-State-Physics, Technical University Berlin, 10623 Berlin, Germany Department of Physics and Astronomy, Georgia State University, Atlanta, GA-30303, USA
A. Hoffmann
Affiliation:
Institute for Solid-State-Physics, Technical University Berlin, 10623 Berlin, Germany
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Abstract

Moderately and heavily Mg-doped GaN were studied by a combination of post-growth annealing processes and electron beam irradiation techniques during cathodoluminescence (CL) to elucidate the chemical origin of the recombination centers responsible for the main optical emission lines. The shallow donor at 20–30 meV below the conduction band, which is involved in the donor-acceptor-pair (DAP) emission at 3.27 eV, was attributed to a hydrogen-related center, presumably a (VN-H) complex. Due to the small dissociation energy (<2 eV) of the (VN-H) complex, this emission line was strongly reduced by low-energy electron irradiation. CL investigations of the DAP at a similar energetic position in Si-doped (n-type) GaN indicated that this emission line is of different chemical origin than the 3.27 eV DAP in Mg-doped GaN. A slightly deeper DAP emission centered at 3.14 eV was observed following low-energy electron irradiation, indicating the appearance of an additional donor level with a binding energy of 100–200 meV, which was tentatively attributed to a VN-related center. The blue band (2.8–3.0 eV) in heavily Mg-doped GaN was found to consist of at least two different deep donor levels at 350±30 meV and 440±40 meV. The donor level at 350±30 meV was strongly affected by electron irradiation and attributed to a H-related defect.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992)Google Scholar
2. Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989)Google Scholar
3. Gelhausen, O., Phillips, M. R. and Goldys, E. M., Journal of Physics D 36, 2976 (2003)Google Scholar
4. Kaufmann, U., Schlotter, P., Obloh, H., Köhler, K., and Maier, M., Phys. Rev. B 62, 10867 (2000)Google Scholar
5. Eckey, L., von Gfug, U., Holst, J., Hoffmann, A., Kaschner, A., Siegle, H., Thomsen, C., Schineller, B., Heime, K., Heuken, M., Schön, O. and Beccard, R., J. Appl. Phys. 84, 5828 (1998)Google Scholar
6. Götz, W., Johnson, N. M., Walker, J., Bour, D. P. and Street, R. A., Appl. Phys. Lett. 68, 667 (1996)Google Scholar
7. Hoffmann, A., “Optical properties of GaN,” in “Advances in Solid State Physics (Festkörperprobleme XXXVI),” (editor Helbig, R.), ch. 2, 3356, Vieweg & Sohn, Wiesbaden (1997)Google Scholar
8. Akasaki, I., Amano, H., Kito, M. and Hiramatsu, K., J. of Luminescence 48 & 49, 666 (1991)Google Scholar
9. Glaser, E. R., Carlos, W. E., Braga, G. C. B., Freitas, J. A. Jr, Moore, W. L., Shanabrook, B. V., Henry, R. L., Wickenden, A. E., Koleske, D. D., Obloh, H., Kozodoy, P., DenBaars, S. P. and Mishra, U. K., Phys. Rev. B 65, 853121 (2002)Google Scholar
10. Wetzel, C., Suski, T., Ager, J.W. III, Weber, E.R., Haller, E.E., Fischer, S., Meyer, B.K., Molnar, R.J., Perlin, P., Phys. Rev. Lett. 78, 3923 (1997)Google Scholar
11. Götz, W., Johnson, N. M., Chen, C., Liu, H., Kuo, C. and Imler, W., Appl. Phys. Lett. 68, 3144 (1996)Google Scholar
12. Shahedipour, F. and Wessels, B. W., Appl. Phys. Lett. 76, 3011 (2000)Google Scholar
13. van de Walle, C.G., Phys. Rev. B 56, 10020 (1997)Google Scholar
14. Monemar, B., Paskov, P. P., Paskova, T., Bergman, J. P., Pozina, G., Chen, W. M., Hai, P. N., Buyanova, I. A., Amano, H. and Akasaki, I., Mat. Science and Engineering B93, 112 (2002)Google Scholar
15. Ionascut-Nedelcescu, A., Carlone, C., Houdayer, A., von Bardeleben, H. J., Cantin, J.-L. and Raymond, S., IEEE Transactions on Nuclear Science 49, 2733 (2002)Google Scholar
16. Neugebauer, J. and van de Walle, C. G., Phys. Rev. Lett. 75, 4452 (1995)Google Scholar
17. Hovington, P., Drouin, D., and Gauvin, R., Scanning 19, 1 (1997)Google Scholar
18. Eckey, L., Holst, J.-Ch., Maxim, P., Heitz, R., Hoffmann, A., Broser, I., Meyer, B.K., Wetzel, C., Mokhov, E. N. Baranov, P. G., Appl. Phys. Lett. 68, 415 (1996)Google Scholar
19. Gelhausen, O., Klein, H. N., Phillips, M. R. and Goldys, E. M., Appl. Phys. Lett. 83, 3293 (2003)Google Scholar
20. Neugebauer, J. and van de Walle, C. G., Appl. Phys. Lett. 68, 1829 (1996)Google Scholar
21. Look, D. C., Reynolds, D. C., Fang, Z.-Q., Hemsky, J. W., Sizelove, J. R. and Jones, R. L., Materials Science and Engineering B 66, 30 (1999)Google Scholar
22. Leroux, M., Beaumont, B., Grandjean, N., Lorenzini, P., Haffouz, S., Vennegues, P., Massies, J. and Gilbart, P., Materials Science and Engineering B50, 97 (1997)Google Scholar
23. Glaser, E. R., Carlos, W. E., Braga, G. C. B., Freitas, J. A. Jr., Moore, W. L., Shanabrook, B. V., Henry, R. L., Wickenden, A. E., Koleske, D. D., Obloh, H., Kozodoy, P., DenBaars, S. P. and Mishra, U. K., Phys. Rev. B 65, 853121 (2002)Google Scholar
24. Reboredo, F. A. and Pantelides, S. T., Phys. Rev. Lett. 82, 1887 (1999)Google Scholar