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Formation and Characterization of Single Crystal Ni2MnGa Thin Films

  • J. W. Dong (a1), L. C. Chen (a1), S. Mckernan (a2), J. Q. Xie (a1), M. T. Figus (a1), R. D. James (a3) and C. J. Palmstrøm (a1)...

Abstract

In this paper, molecular beam epitaxial growth of Ni2MnGa single crystal layers on GaAs (001) using a NiGa interlayer is reported. X-ray diffraction and transmission electron microscopy confirmed an epitaxial relationship of Ni2MnGa [100]“010] // GaAs [100] [010] and a tetragonal structure of the film (a = b = 5.79 Å, c = 6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers revealed an in-plane magnetization of ∼200 emu/cm3at room temperature and a Curie temperature of ∼350 K. The martensitic phase transformation was observed to occur at ∼250 K

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Formation and Characterization of Single Crystal Ni2MnGa Thin Films

  • J. W. Dong (a1), L. C. Chen (a1), S. Mckernan (a2), J. Q. Xie (a1), M. T. Figus (a1), R. D. James (a3) and C. J. Palmstrøm (a1)...

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