Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-23T20:03:32.651Z Has data issue: false hasContentIssue false
  • English
  • Français

Forces that Drive the Self-assembly of Metallic Dots on Semiconductor Substrates

Published online by Cambridge University Press:  01 February 2011

David Salac  and
Wei Lu
David Salac
Affiliation:
dsalac@umich.edu, University of Michigan, Mechanical Engineering, Ann Arbor, MI 48109, United States
Wei Lu
Affiliation:
weilu@umich.edu, University of Michigan, Mechanical Engineering, Ann Arbor, MI, 48109, United States
Get access

Abstract

The scaling and ordering of metallic nanoclusters on semiconductor substrates has been explored computationally. Numerical techniques were implemented to calculate the total electrostatic and van der Waals energies for systems containing multiple disks. Observations show that interactions in charge clouds beneath the metallic disks led to an electrostatic repulsive force. Attraction was observed due to the van der Waals energy. An energy barrier exists for disk coalescence. This work suggests the potential of double layer charges in the development of large-scale nanodot systems that require precise control over both dot location and size.

Keywords

self-assemblydiffusionmetal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M14-03
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Carroll, D. L., Wagner, M., Ruhle, M., et al., Phys Rev B 55, 9792 (1997).Google Scholar
2. Hugelmann, M. and Schindler, W., Appl Phys Lett 85, 3608 (2004).Google Scholar
3. Gai, Z., Wu, B., Pierce, J. P., et al., Phys Rev Lett 89 (2002).Google Scholar
4. Ross, F. M., Bennett, P. A., Tromp, R. M., et al., Micron 30, 21 (1999).Google Scholar
5. Sze, S. M., Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981).Google Scholar
6. Bowen, W. R. and Jenner, F., Adv Colloid Interfac 56, 201 (1995).Google Scholar
7. French, R. H., J Am Ceram Soc 83, 2117 (2000).Google Scholar
8. Tung, R. T., Mater Chem Phys 32, 107 (1992).Google Scholar
9. Yang, W., Jedema, F. J., Ade, H., et al., Thin Solid Films 308, 627 (1997).Google Scholar
10. Lee, J. H., Wang, Z. M., Strom, N. W., et al., Appl Phys Lett 89, 202101 (2006).Google Scholar
11. Wang, Z. M., Holmes, K., Mazur, Y. I., et al., Nano Res Lett 1, 57 (2006).Google Scholar