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Focused Ion Beam: Advanced Technique for Device Modification

Published online by Cambridge University Press:  25 February 2011

Marsha Abramo  and
Loren Hahn
Marsha Abramo
Affiliation:
Leon Moszkowicz IBM Microelectronics Division, Essex Junction, Vt 05452
Loren Hahn
Affiliation:
Leon Moszkowicz IBM Microelectronics Division, Essex Junction, Vt 05452
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Abstract

Focused ion beam (FIB) technology is used to modify circuits for early-product design debug; it also has the capability to create probe points to underlying metallurgy, allowing device characterization while maintaining full functionality. These techniques provide critical feedback to designers for rapid verification of proposed design changes.

Current FIB technology has its limitations because of redeposition of sputtered material; this phenomena may induce vertical electrical shorts and limit the achievable aspect ratio of a milled via to 6:1. Therefore, innovative enhancements are required to provide modification capability on planar chip technology which may utilize up to five levels of metallurgy. The ability to achieve high-aspect-ratio milling is required to access underlying circuitry. Vias with aspect ratios of 10:1 are necessary in some cases.

This paper reviews a gas-assisted etching (GAE) process that enhances FIB milling by volatilizing the sputtered material, examines the results obtained from utilizing the GAE process for high-aspect-ratio milling, and discusses selectivity of semiconductor materials (silicon, aluminum, tungsten and silicon dioxide).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 741
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Ward, B.W., Economou, N.P., Ivory, J.E., Ward, J.L., Stern, L.A., SPIE 923 (1988).Google Scholar
2 Banerjee, I. and Livengood, R., J. Electrochem. Soc. 140, 1, 183, (1993).CrossRefGoogle Scholar
3 Casey, J.D. jr, Doyle, A.F., Lee, R.G., Stewart, D.K., ESREF 93.Google Scholar
4 Orloff, J., Rev. Sci. Instrum. 64, 5, (1993).CrossRefGoogle Scholar
5 Stewart, D.K., Stern, L.A. and Morgan, J.C., SPIE (1989).Google Scholar