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Fluorine Incorporation Into Hard Amorphous Hydrogenated Carbon Films Deposited by PECVD

Published online by Cambridge University Press:  10 February 2011

F. L. Freire Jr.
Affiliation:
Departamento de Física, PUC-Rio, Rio de Janeiro, 22452-970, RJ, Brazil
L. G. Jacobsohn
Affiliation:
Instituto de Fisica, UFF, Niterói, 24210-340, RJ, Brazil
D. F. Franceschini
Affiliation:
Instituto de Fisica, UFF, Niterói, 24210-340, RJ, Brazil
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Abstract

The incorporation of fluorine into amorphous hydrogenated carbon films deposited by the plasma enhanced chemical vapor deposition technique (PECVD) was investigated. Different mixtures of CH4 and CF4 were employed as the plasma atmosphere, with the partial pressure of CF4 ranging from 0 to 100 %. For all depositions, the self-bias was kept at –350 V. In the case of atmospheres richer than ∼80 % of CF4, no film deposition but substrate erosion was observed. The composition of the films was determined by Ion Beam Analysis (IBA), revealing that fluorine is incorporated into the amorphous network by replacing hydrogen. Infrared (IR) transmission measurements confirmed these results. It was also found that the incorporation of fluorine has the effect of reducing both the internal stress and hardness due to atomic density reduction.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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