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The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor

  • Sarah Estrada (a1), Andreas Stonas (a1), Andrew Huntington (a1), Huili Xing (a1), Larry Coldren (a1), Steven DenBaars (a1), Umesh Mishra (a1) and Evelyn Hu (a1)...

Abstract

We describe the use of wafer fusion to form a heterojunction bipolar transistor (HBT), with an AlGaAs-GaAs emitter-base fused to a GaN collector. In this way, we hope to make use of both the high breakdown voltage of the GaN and the high mobility of the technologically more mature GaAs-based materials. This paper reports the first dc device characteristics of a wafer-fused transistor, and demonstrates the potential of wafer fusion for forming electronically active, lattice-mismatched heterojunctions. Devices utilized a thick base (0.15um) and exhibited limited common-emitter current gain (0.2–0.5) at an output current density of ∼100A/cm2. Devices were operated to VCE greater than 20V, with a low VCE offset (1V). Improvements in both device structure and wafer fusion conditions should provide further improvements in HBT performance. The HBT was wafer-fused at 750°C for one hour. Current-voltage characteristics of wafer-fused p-GaAs/n-GaN diodes suggest that the fusion temperature could be reduced to 500°C. Such a reduction in process temperature should mitigate detrimental diffusion effects in future HBTs.

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The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor

  • Sarah Estrada (a1), Andreas Stonas (a1), Andrew Huntington (a1), Huili Xing (a1), Larry Coldren (a1), Steven DenBaars (a1), Umesh Mishra (a1) and Evelyn Hu (a1)...

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