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Finite Element Modeling of Nanoindentation Measurements of Crystalline and Amorphous Si

Published online by Cambridge University Press:  17 March 2011

J. A. Knapp ,
D. M. Follstaedt ,
S. M. Myers  and
G. A. Petersen
J. A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
S. M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
G. A. Petersen
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
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Abstract

Nanoindentation testing of amorphous Si layers, formed by self-ion implantation, has been performed, and their mechanical properties compared to crystalline Si. The data was analyzed using finite element modeling of the indentation measurement, allowing the properties of the thin amorphous layers to be separated from those of the underlying material. By modeling the materials as isotropic, elastic-plastic solids with the Mises yield criterion, the amorphous Si is shown to have a hardness about 15% lower than crystalline Si and an elastic modulus about 10% lower. Electron and atomic force microscopies of the indents indicate that the amorphous Si does not undergo phase changes during indentation, and that it may be somewhat more ductile than crystalline Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 649: Symposium Q – Fundamentals of Nanoindentation & Nanotribology II , 2000 , Q1.2
Copyright
Copyright © Materials Research Society 2001

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References

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