Polymeric materials are used as interlayer dielectrics for multichip modules. One of the central challenges for these structures is management of the large stresses induced by the differences in the thermal properties of the inorganic component structures and the organic film during processing.
Finite clement analysis has been used to model the stresses in the dielectric material in practical structures used in multilayer microelectronic architecture, such as interlayer vias and the associated internal metal patterns. Calculations have been performed on the stress field at the corner of square vias in benzocyclobutcne based interlayer dielectrics and related polymeric materials. The effects of the thermal and mechanical properties of the polymeric coating on the stress fields in metal patterns have been calculated and provide insight for design and process optimization.