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Field Profile Tailoring in a-Si:H Radiation Detectors

Published online by Cambridge University Press:  25 February 2011

I. Fujieda ,
G. Cho ,
J. Drewery ,
T. Jing ,
S. N. Kaplan ,
V. Perez-Mendez ,
S. Qureshi ,
D. Wildermuth  and
R. A. Street
I. Fujieda
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
G. Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
J. Drewery
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
T. Jing
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
S. N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
S. Qureshi
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
D. Wildermuth
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94306
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Abstract

The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 399
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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