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Field Enhancement Mechanisms and Electron Field Emission Properties of Ion Beam Synthesized and Modified SiC/Si Heterostructures

Published online by Cambridge University Press:  11 February 2011

W. M. Tsang ,
S. P. Wong  and
J. K. N. Lindner
W. M. Tsang
Affiliation:
Dept. of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
S. P. Wong
Affiliation:
Dept. of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
J. K. N. Lindner
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
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Abstract

SiC/Si heterostructures were synthesized by high dose carbon implantation into silicon using a metal vapor vacuum arc ion source. Their electron field emission properties were studied and correlated with results from other characterization techniques including atomic force microscopy (AFM), conducting AFM, Fourier transform infrared absorption spectroscopy, x-ray diffraction and photoelectron spectroscopy. It is clearly demonstrated that there are two types of field enhancement mechanisms responsible for the improvement of the electron field emission properties of these ion beam synthesized SiC/Si heterostructures, namely, the surface morphology effect and the local electrical inhomogeneity effect. The dependence of the FE properties on the carbon implant dose and thermal annealing conditions could be understood in terms of these two field enhancement mechanisms. It is also demonstrated that improvement in the FE properties can be achieved by implanting tungsten ions into these SiC/Si heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.7
Copyright
Copyright © Materials Research Society 2003

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References

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