Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-23T23:57:27.432Z Has data issue: false hasContentIssue false
  • English
  • Français

Field emission properties of nitrogen-doped diamond-like carbon films deposited by direct metal ion beam deposition

Published online by Cambridge University Press:  17 March 2011

Kie Moon Song ,
Namwoong Paik ,
Steven Kim ,
Daeil Kim ,
Seongjin Kim ,
Ju Youn Kim  and
Hyeongtag Jeon
Kie Moon Song
Affiliation:
Department of Applied Physics, Konkuk University, Chungju 380-701, Korea
Namwoong Paik
Affiliation:
SKION Corporation, 50 Harrison St., Hoboken, NJ 07030
Steven Kim
Affiliation:
SKION Corporation, 50 Harrison St., Hoboken, NJ 07030
Daeil Kim
Affiliation:
SKION Corporation, 50 Harrison St., Hoboken, NJ 07030
Seongjin Kim
Affiliation:
SKION Corporation, 50 Harrison St., Hoboken, NJ 07030
Ju Youn Kim
Affiliation:
Division of Materials Science and Eng., Hanyang University, Seoul 133-791, Korea
Hyeongtag Jeon
Affiliation:
Division of Materials Science and Eng., Hanyang University, Seoul 133-791, Korea
Get access

Abstract

Nitrogen-doped diamond-like carbon (DLC) films were deposited on a silicon substrate by direct metal ion beam deposition (DMIBD). Partial pressures of nitrogen gas were changed to get different compositions of nitrogen in the DLC films. The composition and surface morphology of the films were examined using X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). Effect of nitrogen doping on field emission property was studied. The field emission data indicated that the nitrogen doping lowered the turn-on field and increase the current density. It was believed that doping of nitrogen into the DLC film plays an important role in enhancement of the field emission. This enhancement of field emission could be explained by the improvement of electron transport through nitrogen-dope DLC layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 697: Symposium P – Surface Engineering 2001--Fundamentals and Applications , January 2001 , P8.25
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jung, J. H., Ju, B. K., Lee, Y. H., Jang, J., and Oh, M. H., IEEE Elec. Dev. Lett. 18, 197 (1999).Google Scholar
2. Geis, M.W., Efremow, N.N., Woodhouse, J.D., McAleese, M.D., Marchywka, M., Socker, D.G., and Hochedez, J.F., IEEE Electron Device Lett. 12, 456 (1991).Google Scholar
3. Lee, K.R., Kim, M.G., Cho, S.J., Eun, K.Y., and Seong, T.Y., Thin Solid Films 308–309, 263 (1997).Google Scholar
4. Bhattacharyya, S., Cardinaud, C., and Turban, G., J. Appl. Phys. 83, 4491 (1998).Google Scholar
5. Miyake, S., Kaneko, R., Kikuya, Y., Sugimoto, I., J. Tribol. 113, 384 (1991).Google Scholar
6. Chi, E. J., Shim, J. Y., and Paik, H. K., J. Vac. Sci. Technol. B 17, 728 (1999).Google Scholar
7. Park, Y., Ko, Y. W., Sohn, M. H., and Kim, S. I., Mater. Res. Soc. Symp. Proc. 396, 623 (1996).Google Scholar
8. Kim, S. I., Rev. Sci. Instr. 67, 908 (1996).Google Scholar
9. Baba, K. and Hatana, R., Surf. Coat. Technol. 136, 192 (2001).Google Scholar
10. Wood, P., Wydeven, T., and Tsuji, O., Thin Solid Films 258, 151 (1995).Google Scholar
11. Geis, M.W., Efremow, N.N., Krohn, K.E., Twichell, J.C., Lyszczarz, T.M., Kalish, R., Greer, J.A., and Tabat, M.D., Nature 393 431 (1998).Google Scholar