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Field emission enhancement of DLC films using triple-junction type emission structure

Published online by Cambridge University Press:  21 March 2011

Namwoong Paik ,
Michael Martin ,
Daeil Kim ,
Sungjin Kim ,
Steven Kim  and
Kie Moon Song
Namwoong Paik
Affiliation:
SKION Corporation, Hoboken, New Jersey, 07030 U. S. A.
Michael Martin
Affiliation:
SKION Corporation, Hoboken, New Jersey, 07030 U. S. A.
Daeil Kim
Affiliation:
SKION Corporation, Hoboken, New Jersey, 07030 U. S. A.
Sungjin Kim
Affiliation:
SKION Corporation, Hoboken, New Jersey, 07030 U. S. A.
Steven Kim
Affiliation:
SKION Corporation, Hoboken, New Jersey, 07030 U. S. A.
Kie Moon Song
Affiliation:
Department of Applied Physics, Konkuk University, Chungju 380-701Korea
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Abstract

Negative Electron Affinity (NEA) of Diamond-like-Carbon (DLC) films has made DLC films a favorable candidate for field emission display (FED). It was suggested that triple-junction type structure could enhance the field emission characteristics. A triple junction is defined as the intersection of a semiconductor surface with a metal substrate in vacuum. In this study, field emission enhancement in triple junction type structures was investigated. As a metal substrate 5000 of Mo films were deposited. Then, 3000–4000 of DLC film was deposited as a semiconductor material. Thin film layers were made using a negative ion beam source. After the deposition, using an excimer laser, we removed the DLC layer and made circular shaped triple junction trenches with a diameter of 25–250 μm. The field emission characteristics such as I–V characteristics turn on voltage and emission lifetime data were obtained for a diode type field emission measurement system. Overall results show significantly enhanced performance of field emission characteristics such as uniform emission over patterned area, reduced turn on voltages and longer lifetimes can be achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.38.1
Copyright
Copyright © Materials Research Society 2002

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