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Field Effect Transistor Structure Based on Strain Induced Polarization Charges

  • D.L. Smith (a1), R.T. Collins (a2), T.F. Kuech (a2) and C. Mailhiot (a3)

Abstract

We suggest a new field effect transistor based on strain-induced polarization charges. The structure utilizes the pseudomorphic growth of a strained barrier layer on a substrate oriented in a polar direction such as [111] or [211]. Polarization charges in the barrier layer are generated by the piezoelectric effect. A two-dimensional (2-D) electron gas, whose density can be modulated by an external bias, forms at the hetero-interface and it screens the polarization charge. Zero bias densities of several 1011 e/cm2 and threshold voltages of 0.5 V can be achieved. Both normally-on and normally-off structures are possible.

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Field Effect Transistor Structure Based on Strain Induced Polarization Charges

  • D.L. Smith (a1), R.T. Collins (a2), T.F. Kuech (a2) and C. Mailhiot (a3)

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